Subcoded information carriers: hybrid moiré systemESCHBACH, R; BRYNGDAHL, O.Journal of the Optical Society of America (1930). 1983, Vol 73, Num 9, pp 1123-1129, issn 0030-3941Article

Possibilités de construire des matrices de photodiodes avec accumulation de porteurs de charge minoritaires dans les régions de base des diodesMURATIKOV, K. L.Žurnal tehničeskoj fiziki. 1983, Vol 53, Num 7, pp 1353-1357, issn 0044-4642Article

Recombination-induced heating of free carriers in a semiconductorBIMBERG, D; MYCIELSKI, J.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5490-5493, issn 0163-1829Article

Choas and broadband noise in extrinsic photoconductorsTEITSWORTH, S. W; WESTERVELT, R. M.Physical review letters. 1984, Vol 53, Num 27, pp 2587-2590, issn 0031-9007Article

Hot-carrier effects in non-radiative multiphonon capture by deep traps in semiconductorsPASSLER, R.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 33, pp 5957-5974, issn 0022-3719Article

Biréfringence naturelle liée aux porteurs libres dans les semiconducteurs à plusieurs vallées de symétrie cubiqueTSITSISHVILI, E. G.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 7, pp 1308-1310, issn 0015-3222Article

Current multiplication in MIS structuresCHEIN WEI JEN; CHUNG LEN LEE; TAN FU LEI et al.Solid-state electronics. 1984, Vol 27, Num 1, pp 1-11, issn 0038-1101Article

A new static method for measuring minority carrier lifetimeMANIFACIER, J.-C; MOREAU, Y; HENISCH, H. K et al.Journal of applied physics. 1983, Vol 54, Num 9, pp 5158-5160, issn 0021-8979Article

THE ELECTROCHEMICAL CHARACTERIZATION OF N-TYPE GALLIUM ARSENIDEAMBRIDGE T; ELLIOTT CR; FAKTOR MM et al.1973; J. APPL. ELECTROCHEM.; G.B.; DA. 1973; VOL. 3; NO 1; PP. 1-15; BIBL. 16 REF.Serial Issue

MEASUREMENT OF THE MOBILITY AND CONCENTRATION OF CARRIERS IN DIFFUSED ZONES IN SI WITH A GATE CONTROLLED STRUCTURE.DARWISH MY.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 7; PP. 397-402; BIBL. 16 REF.Article

Thin film conductance: evaluation and correlation with defect formation parametersMAIER, J.Physica status solidi. A. Applied research. 1989, Vol 112, Num 1, pp 115-122, issn 0031-8965Article

Complete electrical characterization of recombination properties of titanium in siliconWANG, A. C; SAH, C. T.Journal of applied physics. 1984, Vol 56, Num 4, pp 1021-1031, issn 0021-8979Article

Lysotypie de Vibrio NAG isolés en URSSGANIN, V. S; BYSTRYJ, N. F; URBANOVICH, L. YA et al.Žurnal mikrobiologii, epidemiologii i immunobiologii. 1983, Num 9, pp 89-92Article

Microsecond carrier lifetimes in strained silicon-germanium alloys grown by rapid thermal chemical vapor depositionSCHWARTZ, P. V; STURM, J. C.Applied physics letters. 1990, Vol 57, Num 19, pp 2004-2006, issn 0003-6951, 3 p.Article

Longueur de cohérence des porteurs de charge à lois de dispersion différentes dans la région semiconducteur de structures supraconductrices faiblement couplées supraconducteur-semiconducteur-supraconducteurALFEEV, V. N; GRITSENKO, N. I.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 11, pp 2075-2077, issn 0015-3222Article

The energy of the dangling-bond states in a-SiLE COMBERG, P; SPEAR, W. E.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1986, Vol 53, Num 1, pp L1-L7, issn 0141-8637Article

SCALING LAW FOR HOT-CARRIER INJECTION IN INSULATORS.SHARMA YK; SRIVASTAVA BB.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 11; PP. 1214-1215; BIBL. 2 REF.Article

INFLUENCE OF DEFORMATION ON THE MOBILITY AND LIFETIMES OF CHARGE-CARRIERS IN ANTHRACENE CRYSTALSARIS FC; LEWIS TJ; THOMAS JM et al.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 9; PP. 913-917; ABS. FR.; BIBL. 15 REF.Serial Issue

ZUM NACHWEIS VON MINORITAETSTRAEGER-TRAPS IN HALBLEITERN = MISE EN EVIDENCE DES PIEGES DE PORTEURS MINORITAIRES DANS LES SEMI-CONDUCTEURSLEMKE H.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. 539-545; ABS. ENG; BIBL. 6 REF.Article

EFFECT OF CHARGED-CENTRE SCATTERING ON THE MOBILITY OF PHOTO-EXCITED CARRIERS IN DEFECT PHOTOCONDUCTORSSIMMONS JG; TAYLOR GW.1973; PHILOS. MAG.; G.B.; DA. 1973; VOL. 27; NO 1; PP. 121-126; BIBL. 10 REF.Serial Issue

A CARRIER TEMPERATURE MODEL SIMULATION OF A DOUBLE-DRIFT IMPATT DIODEKAFKA HJ; HESS K.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 7; PP. 831-834; BIBL. 9 REF.Article

THE MOBILITY OF FREE CARRIERS IN PBSE CRYSTALSSCHLICHTING U; GOBRECHT KH.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 4; PP. 753-758; BIBL. 11 REF.Serial Issue

DIE ABHAENGIGKEIT DER TRAEGERBEWEGLICHKEIT IN SILIZIUM VON DER KONZENTRATION DER FREIEN LADUNGSTRAEGER. I = LA VARIATION, EN FONCTION DE LA DENSITE DES PORTEURS DE CHARGE LIBRE, DE LA MOBILITE DES PORTEURS DANS LE SILICIUMDANNHAUSER F.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1371-1375; ABS. ANGL.; BIBL. 21 REF.Serial Issue

MINORITY CARRIER INJECTION IN RELAXATION SEMICONDUCTORS.POPESCU C; HENISCH HK.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 4; PP. 1563-1568; BIBL. 5 REF.Article

THE BEHAVIOUR OF ARSENIC IN SILICON.MAGDEN IN; KALNEV NA; KONDRATEV AN et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 26; NO 2; PP. 737-742; ABS. ALLEM.; BIBL. 16 REF.Article